Characterization of Deep Levels in n-type and Semi-Insulating 4H-SiC Epitaxial Layers by Thermally Stimulated Current Spectroscopy

Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron

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Effect of Trap Levels and Defect Inhomogeneities on Carrier Transport in SiC Crystals and Radiation Detectors

We present investigation of carrier transport and trapping in 4H-SiC single crystals and high-energy radiation detectors. SiC detectors were produced from bulk vanadium-compensated semi-insulating single crystal 4H-SiC and provided with nickel ohmic and titanium Schottky contacts. The prevailing defect levels were revealed by means of thermally stimulated current and thermally stimulated depola...

Effect of Z1/2, EH5, and Ci1 Deep Defects on the Performance of n-type 4H-SiC Epitaxial Layers Schottky Detectors: Alpha Spectroscopy and Deep Level Transient Spectroscopy Studies

Temperature Dependence of Current Conduction in Semi-Insulating 4H-SiC Epitaxial Layer

Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates

Using high-temperature annealing conditions with a graphite cap covering the C-face of, both, on axis and 8° off-axis 4H-SiC samples, large and homogeneous single epitaxial graphene layers have been grown. Raman spectroscopy shows evidence of the almost free-standing character of these monolayer graphene sheets, which was confirmed by magneto-transport measurements. On the best samples, we find...